power transistors 1 2sc3944, 2sc3944a 2sc3944, 2sc3944a 2sc3944, 2sc3944a 2sc3944, 2sc3944a 2sc3944, 2sc3944a silicon npn epitaxial planar type for low-frequency driver and high power amplification complementary to 2sa1535 and 2sa1535a features ? excelent current i c characteristics of forward current transfer ratio h fe vs. collector ? high transition frequency f t ? a complementary pair with 2sa1535 and 2sa1535a, is optimum for the driver-stage of a 60 w to 100 w output amplifier ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sc3944 v cbo 150 v voltage 2sc3944a 180 collector to 2sc3944 v ceo 150 v emitter voltage 2sc3944a 180 emitter to base voltage v ebo 5v peak collector current i cp 1.5 a collector current i c 1a collector power t c = 25 cp c 15 w dissipation t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff 2sc3944 i cbo v cb = 150 v, i e = 0 10 a current 2sc3944a v cb = 180 v, i e = 0 10 collector to base 2sc3944 v ceo i c = 1 ma, i b = 0 150 v voltage 2sc3944a 180 emitter cutoff current v ebo i e = 10 a, i c = 0 5 v forward current transfer ratio h fe1 * v ce = 10 v, i c = 150 ma 95 160 220 h fe2 v ce = 5 v, i c = 500 ma 50 100 collector to emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.5 2 v base to emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 1 2 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 10 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 30 50 pf 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 rank q r h fe1 95 to 155 130 to 220 1 : base 2 : collector 3 : emitter eiaj : sc-67 to-220f package note) * : rank classification
power transistors 2 2sc3944, 2sc3944a h fe ? i c f t ? i e c ob ? v cb p c ? t a v ce(sat) ? i c v be(sat) ? i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 25 20 15 10 5 t c =ta ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 0.01 0.1 1 0.03 0.3 0.01 10 1 0.1 0.03 0.3 3 i c /i b =10 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 0.03 0.3 0.01 10 1 0.1 0.03 0.3 3 i c /i b =10 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 0.03 0.3 1 1000 100 10 3 30 300 v ce =10v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.03 0.1 0.3 1 0 400 300 100 200 v cb =10v f=10mhz t c =25 ? c emitter current i e ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 0 100 80 60 40 20 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 single pulse t c =25 ? c t=10ms t=<50 s 2sc3944a 2sc3944 dc i cp i c 1ms collector to emitter voltage v ce ( v ) collector current i c ( a )
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